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Improved thermoelectric properties due to electronic topological transition under high pressure

✍ Scribed by N.V. Chandra Shekar; D.A. Polvani; J.F. Meng; J.V. Badding

Book ID: 103883565
Publisher: Elsevier Science
Year: 2005
Tongue: English
Weight: 206 KB
Volume: 358
Category: Article
ISSN: 0921-4526
DOI: 10.1016/j.physb.2004.12.020

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✦ Synopsis

It is well documented that the large increase in thermopower in some materials under the action of pressure, could be explained by electronic topological transition (ETT). In this paper, the subject is revisited, with fresh experimental reports establishing pronounced enhancement of the TEP due to ETT. Further, the validity and relevance of certain important criteria for obtaining higher thermoelectric power near ETT is discussed. The possibility of using ETT in designing new materials with the thermoelectric figure of merit higher than 1 is examined.

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