Nature of Semiconductor-to-Metal Transition and Volume Properties of Bulk Tetrahedral Amorphous GaSb and GaSb-Ge Semiconductors under High Pressure

✍ Scribed by Sidorov, V. A.; Brazhkin, V. V.; Khvostantsev, L. G.; Lyapin, A. G.; Sapelkin, A. V.; Tsiok, O. B.

• Book ID: 121348811
• Publisher: The American Physical Society
• Year: 1994
• Tongue: English
• Weight: 278 KB
• Volume: 73
• Category: Article
• ISSN: 0031-9007
• DOI: 10.1103/PhysRevLett.73.3262