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Electronic topological transition and semiconductor-to-metal conversion of Bi2Te3 under high pressure

✍ Scribed by Zhang, Junkai; Liu, Cailong; Zhang, Xin; Ke, Feng; Han, Yonghao; Peng, Gang; Ma, Yanzhang; Gao, Chunxiao


Book ID
121016681
Publisher
American Institute of Physics
Year
2013
Tongue
English
Weight
816 KB
Volume
103
Category
Article
ISSN
0003-6951

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It is well documented that the large increase in thermopower in some materials under the action of pressure, could be explained by electronic topological transition (ETT). In this paper, the subject is revisited, with fresh experimental reports establishing pronounced enhancement of the TEP due to E