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Improved resistive switching properties of Ti/ZrO2/Pt memory devices for RRAM application

✍ Scribed by Sheng-Yu Wang; Chen-Han Tsai; Dai-Ying Lee; Chih-Yang Lin; Chun-Chieh Lin; Tseung-Yuen Tseng

Book ID: 118486082
Publisher: Elsevier Science
Year: 2011
Tongue: English
Weight: 842 KB
Volume: 88
Category: Article
ISSN: 0167-9317
DOI: 10.1016/j.mee.2010.11.058

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