Improvement of resistance switching properties for metal/La0.7Ca0.3MnO3/Pt devices

✍ Scribed by Yang, Rui ;Li, Xiaomin

• Publisher: John Wiley and Sons
• Year: 2011
• Tongue: English
• Weight: 660 KB
• Volume: 208
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.201000079

✦ Synopsis

Abstract

On the polycrystalline La~0.7~Ca~0.3~MnO~3~ (LCMO) film, various top electrodes (TEs) have been prepared to form metal/LCMO/Pt devices, including Al, Ag and Ag–Al alloy with the atomic ratio of Ag/Al = 2:1. It is found that the switching polarity of the devices with Al as TE is opposite to those with Ag as TE. For the Al layered devices, the endurance and switching speed have been effectively improved by decreasing the thickness of the Al electrode from 50 to 10 nm. Meanwhile, the endurance and yield of the resistance switching behaviour observed at Ag layered structure have been improved by alloying some Al into Ag electrode. The present work suggests a possible way to improve the resistance switching properties by adjusting the microstructure of the electrodes to modulate the interface structure of the metal/LCMO interface.