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Resistance switching properties of epitaxial Pr0.7Ca0.3MnO3thin films with different electrodes

โœ Scribed by Lau, H. K. ;Leung, C. W. ;Chan, Y. K.


Publisher
John Wiley and Sons
Year
2009
Tongue
English
Weight
541 KB
Volume
206
Category
Article
ISSN
0031-8965

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โœฆ Synopsis


Abstract

Resistance switching effect caused by external electric field was investigated in Pr~0.7~Ca~0.3~MnO~3~ (PCMO) thin films grown on (001)โ€oriented LaAlO~3~, by using different metallic (Al, Pt, Au, Ti) electrodes. When Al was used as one or both of the electrodes, PCMO thin films exhibited resistance changes upon reversing voltage polarities. Nonlinear, hysteretic currentโ€“voltage loops were observed. Our measurements showed that the total resistance of the samples were dominated by interfacial resistance. Such kind of device structure can find applications in nonโ€volatile memory devices.


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โœ Yang, Rui ;Li, Xiaomin ๐Ÿ“‚ Article ๐Ÿ“… 2011 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 660 KB

## Abstract On the polycrystalline La~0.7~Ca~0.3~MnO~3~ (LCMO) film, various top electrodes (TEs) have been prepared to form metal/LCMO/Pt devices, including Al, Ag and Agโ€“Al alloy with the atomic ratio of Ag/Alโ€‰=โ€‰2:1. It is found that the switching polarity of the devices with Al as TE is opposite