Resistance switching properties of epitaxial Pr0.7Ca0.3MnO3thin films with different electrodes
โ Scribed by Lau, H. K. ;Leung, C. W. ;Chan, Y. K.
- Publisher
- John Wiley and Sons
- Year
- 2009
- Tongue
- English
- Weight
- 541 KB
- Volume
- 206
- Category
- Article
- ISSN
- 0031-8965
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โฆ Synopsis
Abstract
Resistance switching effect caused by external electric field was investigated in Pr~0.7~Ca~0.3~MnO~3~ (PCMO) thin films grown on (001)โoriented LaAlO~3~, by using different metallic (Al, Pt, Au, Ti) electrodes. When Al was used as one or both of the electrodes, PCMO thin films exhibited resistance changes upon reversing voltage polarities. Nonlinear, hysteretic currentโvoltage loops were observed. Our measurements showed that the total resistance of the samples were dominated by interfacial resistance. Such kind of device structure can find applications in nonโvolatile memory devices.
๐ SIMILAR VOLUMES
## Abstract On the polycrystalline La~0.7~Ca~0.3~MnO~3~ (LCMO) film, various top electrodes (TEs) have been prepared to form metal/LCMO/Pt devices, including Al, Ag and AgโAl alloy with the atomic ratio of Ag/Alโ=โ2:1. It is found that the switching polarity of the devices with Al as TE is opposite