𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Improved profiles of electrical activity in boron implanted silicon

✍ Scribed by Miss N.G. Blamires; M.D. Matthews; R.S. Nelson


Publisher
Elsevier Science
Year
1968
Tongue
English
Weight
135 KB
Volume
28
Category
Article
ISSN
0375-9601

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


An improved model for boron diffusion an
✍ Charlotte T. M. Kwok; Richard D. Braatz; Silke Paul; Wilfried Lerch; Edmund G. S πŸ“‚ Article πŸ“… 2009 πŸ› American Institute of Chemical Engineers 🌐 English βš– 207 KB πŸ‘ 2 views

## Abstract Technologies such as solid‐phase epitaxial regrowth and millisecond annealing techniques have led to a wide range of maximum temperatures and heating rates for activating dopants and eliminating ion implantation damage for transistor junction formation. Developing suitable annealing str