Improved performance of MOVPE-grown GaInNAs quantum wells by control of interfacial strain
β Scribed by Ki-Sung Kim; Jae-Ryung Yoo; Sung-Jin Lim; Ki-Hong Kim; Taek Kim; Yong-Jo Park
- Book ID
- 108165949
- Publisher
- Elsevier Science
- Year
- 2004
- Tongue
- English
- Weight
- 220 KB
- Volume
- 272
- Category
- Article
- ISSN
- 0022-0248
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π SIMILAR VOLUMES
The channeling technique of 2 MeV-He + ions is applied to analyze the lattice structure of GaInNAs quantum wells sandwiched by GaAs barrier layers. The structure-sensitive channeling measurements reveal that the GaInNAs layer contains significant lattice distortion even after post-growth annealing a
Quantum wells of the quaternary (GaIn)(NAs) alloy are grown compressively strained on GaAs by metal-organic vapor phase epitaxy (MOVPE) at low temperatures under non-equilibrium conditions. Growth experiments of particular heteroepitaxial multilayer systems are reported and the influence of varying