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Improved performance of 1.3-μm In(Ga)As quantum-dot lasers by modifying the temperature profile of the GaAs spacer layers

✍ Scribed by Walker, C.L.; Sandall, I.C.; Smowton, P.M.; Mowbray, D.J.; Liu, H.Y.; Liew, S.L.; Hopkinson, M.

No coin nor oath required. For personal study only.

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