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Temperature Dependence of the Threshold Current and the Lasing Wavelength in 1.3-μm GalnNAs/GaAs Single Quantum Well Laser Diode

✍ Scribed by Takeshi Kitatani; Masahiko Kondow; Koji Nakahara; M. C. Larson; Kazuhisa Uomi

Publisher
Optical Society of Japan
Year
1998
Tongue
English
Weight
257 KB
Volume
5
Category
Article
ISSN
1340-6000

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We have measured the change in threshold current and lasing photon energy as a function of pressure in 1.3 mm semiconductor quantum well lasers. We observe a decrease in threshold current with increasing pressure indicative of an Auger recombination process which decreases as the band gap increases.