✦ LIBER ✦

Improved junction capacitance model for the GaAs MESFET

✍ Scribed by Rodriguez-Tellez, J.; Mezher, K.; Al-Daas, M.

Book ID: 114535259
Publisher: IEEE
Year: 1993
Tongue: English
Weight: 306 KB
Volume: 40
Category: Article
ISSN: 0018-9383
DOI: 10.1109/16.239753

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

A capacitance model for GaAs MESFET's

✍ Tzu-Hung Chen; Shur, M.S. 📂 Article 📅 1985 🏛 IEEE 🌐 English ⚖ 675 KB

New optical capacitance model for GaAs M

New optical capacitance model for GaAs MESFETs

✍ C. Navarro; J. M. Zamanillo; A. Mediavilla; A. Tazón; J. L. García 📂 Article 📅 2000 🏛 John Wiley and Sons 🌐 English ⚖ 328 KB 👁 2 views

New empirical equations for simulating the optical and bias dependencies of the junction capacitances of the GaAs MESFET are presented in this paper. New linear and quasilogarithmic ¨ariations ( ) ¨ersus the incident optical power PL for gate-to-drain and gate-to-source ( ) capacitances C and C , re

An improved GaAs MESFET model for SPICE

✍ McCamant, A.J.; McCormack, G.D.; Smith, D.H. 📂 Article 📅 1990 🏛 IEEE 🌐 English ⚖ 294 KB

An accurate photonic capacitance model f

An accurate photonic capacitance model for GaAs MESFETs

✍ Navarro, C.; Zamanillo, J.-M.; Sanchez, A.M.; Puente, A.T.; Garcia, J.L.; Lomer, 📂 Article 📅 2002 🏛 IEEE 🌐 English ⚖ 255 KB

An improved Chalmers model for a GaAs ME

An improved Chalmers model for a GaAs MESFET

✍ Q. Xiao; B. L. Ooi; J. Ma 📂 Article 📅 2000 🏛 John Wiley and Sons 🌐 English ⚖ 257 KB 👁 2 views

most advantageous without RIN and the w s 2 case with RIN at P s y60 dB. s 4. CONCLUSION ## Ž . In this paper, the effects of the relative intensity noise RIN of the laser output are analyzed in two-, three-, four-, and six-wavelength chip-synchronized optical orthogonal codedivision multiple-acce

A new charge conserving capacitance mode

A new charge conserving capacitance model for GaAs MESFET's

✍ Nawaz, M.; Fjeldly, T.A. 📂 Article 📅 1997 🏛 IEEE 🌐 English ⚖ 367 KB