A comparison between pMOS and nMOS short channel transistors with high-k dielectric subjected to channel hot-carrier (CHC) stress is presented. Smaller CHC degradation is observed in pMOS devices. At high temperature, the CHC degradation increases for pMOS and nMOS. The temperature dependence of the
✦ LIBER ✦
Improved hot-carrier and short-channel performance in vertical nMOSFETs with graded channel doping
✍ Scribed by Xiangdong Chen; Ouyang, Q.C.; Geng Wang; Banerjee, S.K.
- Book ID
- 114616879
- Publisher
- IEEE
- Year
- 2002
- Tongue
- English
- Weight
- 643 KB
- Volume
- 49
- Category
- Article
- ISSN
- 0018-9383
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## Abstract The degradation produced by channel hot‐carrier (CHC) on short channel transistors with high‐k dielectric has been analyzed. For short channel transistors (__L__<0.15 µm), the most damaging stress condition has been found to be __V__~G~=__V__~D~ instead of the ‘classical’ __V__~G~=__V__