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Implementation of a comprehensive and robust MOSFET model in cadence SPICE for ESD applications

✍ Scribed by Gao, X.F.; Liou, J.J.; Bernier, J.; Croft, G.; Ortiz-Conde, A.

Book ID
118698324
Publisher
IEEE
Year
2002
Tongue
English
Weight
389 KB
Volume
21
Category
Article
ISSN
0278-0070

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## Abstract Recently we developed a model for symmetric double‐gate MOSFETs (SDDGM) that, for the first time, considers the doping concentration in the Si film in the complete range from 1Γ—10^14^ to 3Γ—10^18^ cm^βˆ’3^. The model covers a wide range of technological parameters and includes short channe