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Impact of Temperature on the Resistive Switching Behavior of Embedded -Based RRAM Devices

✍ Scribed by Walczyk, C.; Walczyk, D.; Schroeder, T.; Bertaud, T.; Sowinska, M.; Lukosius, M.; Fraschke, M.; Wolansky, D.; Tillack, B.; Miranda, E.; Wenger, C.

Book ID
114620609
Publisher
IEEE
Year
2011
Tongue
English
Weight
906 KB
Volume
58
Category
Article
ISSN
0018-9383

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The resistive switching characteristics
The resistive switching characteristics of a Ti/Gd2O3/Pt RRAM device
✍ Kou-Chen Liu; Wen-Hsien Tzeng; Kow-Ming Chang; Yi-Chun Chan; Chun-Chih Kuo; Chun πŸ“‚ Article πŸ“… 2010 πŸ› Elsevier Science 🌐 English βš– 613 KB

We successfully fabricated the Gd 2 O 3 film for the application of resistive random access memory (RRAM). The resistive switching behavior of the Ti/Gd 2 O 3 /Pt capacitor structure could be both operated under positive or negative bias. However, there was a significant difference on the switching