## Abstract In this work we focus on the impact of different buffer and nucleation layers on the corresponding crystalline quality of gallium nitride (GaN), grown by metal‐organic chemical vapour deposition (MOCVD). __In situ__ curvature measurements, X‐ray diffraction (XRD) and transmission electr
✦ LIBER ✦
Impact of rough silicon buffer layer on electronic quality of GaAs grown on Si substrate
✍ Scribed by B. Azeza; M. Ezzedini; Z. Zaaboub; R. M’ghaieth; L. Sfaxi; F. Hassen; H. Maaref
- Book ID
- 113514297
- Publisher
- Elsevier Science
- Year
- 2012
- Tongue
- English
- Weight
- 425 KB
- Volume
- 12
- Category
- Article
- ISSN
- 1567-1739
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