✦ LIBER ✦

A GeSi-buffer structure for growth of high-quality GaAs epitaxial layers on a Si substrate

✍ Scribed by Edward Y. Chang; Tsung-Hsi Yang; Guangli Luo; Chun-Yen Chang

Publisher: Springer US
Year: 2005
Tongue: English
Weight: 177 KB
Volume: 34
Category: Article
ISSN: 0361-5235
DOI: 10.1007/s11664-005-0175-5

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Growth of a GeSi thick alloy layer on a

Growth of a GeSi thick alloy layer on a Si substrate by liquid phase epitaxy

✍ Tokuzo Sukegawa; Kazuaki Yamashita; Hironobu Katsuno; Masakazu Kimura; Akira Tan 📂 Article 📅 1991 🏛 Elsevier Science 🌐 English ⚖ 574 KB

Growth of high quality GaAs layers on Si

Growth of high quality GaAs layers on Si substrates by MOCVD

✍ Masahiro Akiyama; Yoshihiro Kawarada; Takashi Ueda; Seiji Nishi; Katsuzo Kaminis 📂 Article 📅 1986 🏛 Elsevier Science 🌐 English ⚖ 676 KB

Molecular beam epitaxial growth of high

Molecular beam epitaxial growth of high quality GaAs layer directly on GaP substrate

✍ Masayoshi Tsuji; Yasushi Takano; Teiji Torihata; Yasuhiro Kanaya; Kangsa Pak; Hi 📂 Article 📅 1989 🏛 Elsevier Science 🌐 English ⚖ 430 KB

A new GaAs on Si structure using AlAs bu

A new GaAs on Si structure using AlAs buffer layers grown by atomic layer epitaxy

✍ Ohtsuka, N.; Kitahara, K.; Ozeki, M.; Kodama, K. 📂 Article 📅 1990 🏛 Elsevier Science 🌐 English ⚖ 422 KB

High quality 6H-SiC (0001) homoepitaxial

High quality 6H-SiC (0001) homoepitaxial layers as substrate surface for growth of AlN epitaxial layers

✍ C. Hallin; A. Kakanakova-Georgieva; P. Persson; E. Janzén 📂 Article 📅 2005 🏛 John Wiley and Sons 🌐 English ⚖ 351 KB

High Quality GaN Layers on Si(111) Subst

High Quality GaN Layers on Si(111) Substrates: AlN Buffer Layer Optimisation and Insertion of a SiN Intermediate Layer

✍ Hageman, P.R. ;Haffouz, S. ;Kirilyuk, V. ;Grzegorczyk, A. ;Larsen, P.K. 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 91 KB 👁 2 views

We present a study on the material properties of GaN films grown on (111) silicon substrates by low-pressure metalorganic chemical vapour deposition using AlN buffer layers. This buffer layer is optimised with respect to growth temperature and time for the optical and structural properties of the Ga