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Impact of Precursor Chemistry and Process Conditions on the Scalability of ALD HfO[sub 2] Gate Dielectrics

✍ Scribed by Swerts, Johan; Peys, Nick; Nyns, Laura; Delabie, Annelies; Franquet, Alexis; Maes, Jan Willem; Van Elshocht, Sven; De Gendt, Stefan

Book ID: 118264771
Publisher: The Electrochemical Society
Year: 2010
Tongue: English
Weight: 189 KB
Volume: 157
Category: Article
ISSN: 0013-4651
DOI: 10.1149/1.3258664

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