✦ LIBER ✦

Impact of oxidation and reduction annealing on the electrical properties of Ge/La2O3/ZrO2 gate stacks

✍ Scribed by Christoph Henkel; Per-Erik Hellström; Mikael Östling; Michael Stöger-Pollach; Ole Bethge; Emmerich Bertagnolli

Book ID: 116890860
Publisher: Elsevier Science
Year: 2012
Tongue: English
Weight: 788 KB
Volume: 74
Category: Article
ISSN: 0038-1101
DOI: 10.1016/j.sse.2012.04.004

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Electrical and interfacial characteristi

Electrical and interfacial characteristics of nanolaminate (Al2O3/ZrO2/Al2O3) gate stack on fully depleted SiGe-on-insulator

✍ Zengfeng Di; Miao Zhang; Weili Liu; Qinwo Shen; Zhitang Song; Chenglu Lin; Anpin 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 455 KB

Effect of post metallization annealing o

Effect of post metallization annealing on structural and electrical properties of Ge metal-oxide-semiconductor (MOS) capacitors with Pt/HfO2 gate stack

✍ S.V. Jagadeesh Chandra; Jin-Sung Kim; Kyung-Won Moon; Chel-Jong Choi 📂 Article 📅 2012 🏛 Elsevier Science 🌐 English ⚖ 541 KB

The effect of Bi2O3on the electrical and

The effect of Bi2O3on the electrical and mechanical properties of ZrO2-Y2O3ceramics

✍ K. Keizer; A. J. Burggraaf; G. With 📂 Article 📅 1982 🏛 Springer 🌐 English ⚖ 923 KB

Preparation, Electrical Conductivity, an

Preparation, Electrical Conductivity, and Sensory Properties of Oxide Films in the In2O3–SnO2and In2O3–ZrO2Systems

✍ M. V. Kalinina; P. A. Tikhonov; A. T. Nakusov 📂 Article 📅 2003 🏛 SP MAIK Nauka/Interperiodica 🌐 English ⚖ 497 KB

Effects of oxygen content and postdeposi

Effects of oxygen content and postdeposition annealing on the physical and electrical properties of thin Sm2O3 gate dielectrics

✍ Tung-Ming Pan; Chun-Chin Huang 📂 Article 📅 2010 🏛 Elsevier Science 🌐 English ⚖ 571 KB

In this paper, we describe the physical properties and electrical characteristics of thin Sm 2 O 3 dielectric films deposited on Si (100) by means of rf reactive sputtering. The structural and morphological features of these films were studied, as a function of the growth conditions (three various a

Electrical properties of Y[sub 2]O[sub 3

Electrical properties of Y[sub 2]O[sub 3] high-κ gate dielectric on Si(001): The influence of postmetallization annealing

✍ Ioannou-Sougleridis, V.; Vellianitis, G.; Dimoulas, A. 📂 Article 📅 2003 🏛 American Institute of Physics 🌐 English ⚖ 423 KB