Impact of gate-induced drain leakage on retention time distribution of 256 Mbit DRAM with negative wordline bias

✍ Scribed by Minchen Chang; Jengping Lin; Shih, S.N.; Tieh-Chiang Wu; Brady Huang; Jen Yang; Lee, P.-I.

• Book ID: 114617071
• Publisher: IEEE
• Year: 2003
• Tongue: English
• Weight: 657 KB
• Volume: 50
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/ted.2003.812498