Si-H bond breaking induced retention degradation during packaging process of 256 mbit DRAMs with negative wordline bias

✍ Scribed by Minchen Chang; Jengping Lin; Chao-Sung Lai; Ruey-Dar Chang; Shih, S.N.; Mao-Ying Wang; Lee, P.-I.

• Book ID: 114617733
• Publisher: IEEE
• Year: 2005
• Tongue: English
• Weight: 696 KB
• Volume: 52
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/ted.2005.844743