✦ LIBER ✦

Impact ionization current in MOS devices

✍ Scribed by W.W. Lattin; J.L. Rutledge

Publisher: Elsevier Science
Year: 1973
Tongue: English
Weight: 301 KB
Volume: 16
Category: Article
ISSN: 0038-1101
DOI: 10.1016/0038-1101(73)90205-0

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Current tunnelling through MOS devices

✍ A. Bouazra; S. Abdi-Ben Nasrallah; A. Poncet; M. Said 📂 Article 📅 2008 🏛 Elsevier Science 🌐 English ⚖ 347 KB

A review of gate tunneling current in MO

A review of gate tunneling current in MOS devices

✍ Juan C. Ranuárez; M.J. Deen; Chih-Hung Chen 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 432 KB

Gate current in metal-oxide-semiconductor (MOS) devices, caused by carriers tunneling through a classically forbidden energy barrier, is studied in this paper. The physical mechanisms of tunneling in an MOS structure are reviewed, along with the particularities of tunneling in modern MOS transistors

Impact ionization rate of electrons for

Impact ionization rate of electrons for accurate simulation of substrate current in submicron devices

✍ Samar Saha; Chune-Sin Yeh; Bhaskar Gadepally 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 314 KB

Impact ionization current in semi-insula

Impact ionization current in semi-insulating GaAs

✍ C. Paracchini; V. Dallacasa 📂 Article 📅 1989 🏛 Elsevier Science 🌐 English ⚖ 334 KB

Effects of ionizing radiation on MOS dev

Effects of ionizing radiation on MOS devices

✍ B. Andre; J. Buxo; D. Esteve; H. Martinot 📂 Article 📅 1969 🏛 Elsevier Science 🌐 English ⚖ 487 KB

Photocurrents in MOS devices

✍ M Geddo; A Gustinetti; A Stella; S Guerri; G Soncini 📂 Article 📅 1976 🏛 Elsevier Science 🌐 English ⚖ 184 KB