A review of gate tunneling current in MO
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Juan C. RanuΓ‘rez; M.J. Deen; Chih-Hung Chen
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Article
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2006
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Elsevier Science
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English
β 432 KB
Gate current in metal-oxide-semiconductor (MOS) devices, caused by carriers tunneling through a classically forbidden energy barrier, is studied in this paper. The physical mechanisms of tunneling in an MOS structure are reviewed, along with the particularities of tunneling in modern MOS transistors