𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Current tunnelling through MOS devices

✍ Scribed by A. Bouazra; S. Abdi-Ben Nasrallah; A. Poncet; M. Said


Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
347 KB
Volume
28
Category
Article
ISSN
0928-4931

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


A review of gate tunneling current in MO
✍ Juan C. RanuΓ‘rez; M.J. Deen; Chih-Hung Chen πŸ“‚ Article πŸ“… 2006 πŸ› Elsevier Science 🌐 English βš– 432 KB

Gate current in metal-oxide-semiconductor (MOS) devices, caused by carriers tunneling through a classically forbidden energy barrier, is studied in this paper. The physical mechanisms of tunneling in an MOS structure are reviewed, along with the particularities of tunneling in modern MOS transistors