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Impact Ionization Coefficients in 4H-SiC

โœ Scribed by Loh, W.S.; Ng, B.K.; Ng, J.S.; Soloviev, S.I.; Ho-Young Cha; Sandvik, P.M.; Johnson, C.M.; David, J.P.R.


Book ID
114619491
Publisher
IEEE
Year
2008
Tongue
English
Weight
603 KB
Volume
55
Category
Article
ISSN
0018-9383

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Observation of impact ionization in 4H-S
โœ A.M. Ivanov; M.G. Mynbaeva; A.V. Sadokhin; N.B. Strokan; A.A. Lebedev ๐Ÿ“‚ Article ๐Ÿ“… 2009 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 162 KB

Nonequilibrium charge transport has been studied in a structure with a Schottky barrier fabricated on a CVD-grown n-4H-SiC film. The charge introduced by single a-particles was recorded by nuclear spectrometric techniques. The maximum electric field strength in the structure was 1.1 MV/cm. The recor