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Experimental determination of impact ionization coefficients in 4H-SiC

โœ Scribed by Nguyen, D.M.; Raynaud, C.; Dheilly, N.; Lazar, M.; Tournier, D.; Brosselard, P.; Planson, D.

Book ID
122482505
Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
582 KB
Volume
20
Category
Article
ISSN
0925-9635

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Nonequilibrium charge transport has been studied in a structure with a Schottky barrier fabricated on a CVD-grown n-4H-SiC film. The charge introduced by single a-particles was recorded by nuclear spectrometric techniques. The maximum electric field strength in the structure was 1.1 MV/cm. The recor