✦ LIBER ✦

Impact-ionization and noise characteristics of thin III-V avalanche photodiodes

✍ Scribed by Saleh, M.A.; Hayat, M.M.; Sotirelis, P.P.; Holmes, A.L.; Campbell, J.C.; Saleh, B.E.A.; Teich, M.C.

Book ID: 114538954
Publisher: IEEE
Year: 2001
Tongue: English
Weight: 195 KB
Volume: 48
Category: Article
ISSN: 0018-9383
DOI: 10.1109/16.974696

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Noise characteristics of thin multiplica

Noise characteristics of thin multiplication region GaAs avalanche photodiodes

✍ Hu, C.; Anselm, K. A.; Streetman, B. G.; Campbell, J. C. 📂 Article 📅 1996 🏛 American Institute of Physics 🌐 English ⚖ 258 KB

Breakdown voltage in thin III–V avalanch

Breakdown voltage in thin III–V avalanche photodiodes

✍ M. A. Saleh; M. M. Hayat; O. Kwon; A. L. Holmes; J. C. Campbell; B. E. A. Saleh; 📂 Article 📅 2001 🏛 American Institute of Physics 🌐 English ⚖ 225 KB

Multiplication and excess noise characte

Multiplication and excess noise characteristics of thin 4H-SiC UV avalanche photodiodes

✍ Ng, B.K.; Yan, F.; David, J.P.R.; Tozer, R.C.; Rees, G.J.; Qin, C.; Zhao, J.H. 📂 Article 📅 2002 🏛 IEEE 🌐 English ⚖ 216 KB

Effect of impact ionization in the InGaA

Effect of impact ionization in the InGaAs absorber on excess noise of avalanche photodiodes

✍ Ng, J.S.; Tan, C.H.; David, J.P.R.; Rees, G.J. 📂 Article 📅 2005 🏛 IEEE 🌐 English ⚖ 166 KB

A new look at impact ionization-Part II:

A new look at impact ionization-Part II: Gain and noise in short avalanche photodiodes

✍ Yuan, P.; Anselm, K.A.; Hu, C.; Nie, H.; Lenox, C.; Holmes, A.L.; Streetman, B.G 📂 Article 📅 1999 🏛 IEEE 🌐 English ⚖ 218 KB

High-speed and low-noise SACM avalanche

High-speed and low-noise SACM avalanche photodiodes with an impact-ionization-engineered multiplication region

✍ Ning Duan; Shuling Wang; Feng Ma; Ning Li; J.C. Campbell; Chad Wang; L.A. Coldre 📂 Article 📅 2005 🏛 IEEE 🌐 English ⚖ 236 KB