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III-Nitride-Based Quantum Dots and Their Optoelectronic Applications

✍ Scribed by G. E. Weng,A. K. Ling,X. Q. Lv,J. Y. Zhang,B. P. Zhang

Book ID
126339792
Publisher
Nano-Micro Letters
Year
2011
Tongue
English
Weight
227 KB
Volume
3
Category
Article
ISSN
2311-6706

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## Abstract In this paper we discuss the growth of InN, GaN and InGaN QDs by MBE on either GaN or AlN templates. InN QDs on GaN templates were found to occur without an InN wetting layer, a result consistent with the large lattice mismatch of 11% between InN and GaN. Self‐assembled GaN QDs were gro