𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Cubic group-III nitride-based nanostructures—basics and applications in optoelectronics

✍ Scribed by D.J. As

Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
497 KB
Volume
40
Category
Article
ISSN
0026-2692

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Phase Separation in Cubic Group-III Nitr
Phase Separation in Cubic Group-III Nitride Alloys
✍ Scolfaro, L.M.R. 📂 Article 📅 2002 🏛 John Wiley and Sons 🌐 English ⚖ 155 KB 👁 1 views

The thermodynamic properties of cubic group-III nitride ternary alloys In x Ga 1Àx N, In x Al 1Àx N, B x Ga 1Àx N, and B x Al 1Àx N have been studied through first principles total energy calculations combined with a cluster expansion method within the generalized quasi-chemical approach to disorder

Group III-nitride and SiC based micro- a
Group III-nitride and SiC based micro- and nanoelectromechanical resonators for sensor applications
✍ Förster, Ch. ;Cimalla, V. ;Lebedev, V. ;Pezoldt, J. ;Brueckner, K. ;Stephan, R. 📂 Article 📅 2006 🏛 John Wiley and Sons 🌐 English ⚖ 180 KB

## Abstract Micro‐ and nanomechanical AlN and 3C‐SiC resonator beams with resonant frequencies between 20 kHz and 2 MHz, depending on the resonator geometry, have been realized and characterized at ambient conditions. Up to 200 nm thin epitaxial group III‐nitrides and SiC layers were grown on silic

Reduction of Carrier In-Plane Mobility i
Reduction of Carrier In-Plane Mobility in Group-III Nitride Based Quantum Wells: The Role of Internal Electric Fields
✍ Gallart, M. ;Lefebvre, P. ;Morel, A. ;Taliercio, T. ;Gil, B. ;All�gre, J. ;Mathi 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 96 KB 👁 2 views

Localized and free excitons in GaN/Al 0.17 Ga 0.83 N quantum wells are studied by time-resolved photoluminescence (PL) versus temperature. We focus more particularly on 16-monolayer wide quantum wells for which, at T ¼ 8 K, we observe double excitonic features. We assign the latter to two different