Phase Separation in Cubic Group-III Nitride Alloys
โ Scribed by Scolfaro, L.M.R.
- Publisher
- John Wiley and Sons
- Year
- 2002
- Tongue
- English
- Weight
- 155 KB
- Volume
- 190
- Category
- Article
- ISSN
- 0031-8965
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โฆ Synopsis
The thermodynamic properties of cubic group-III nitride ternary alloys In x Ga 1รx N, In x Al 1รx N, B x Ga 1รx N, and B x Al 1รx N have been studied through first principles total energy calculations combined with a cluster expansion method within the generalized quasi-chemical approach to disorder and composition effects. Focus will be given on the phase diagrams T versus x of the alloys. The interplay of miscibility gap and strain influence is analyzed. In particular for In x Ga 1รx N, the calculations carried out here are used to investigate the origin of the light emission process in the InGaN-based optoelectronic devices through a comparison with recent high resolution X-ray and Raman spectroscopy measurements.
๐ SIMILAR VOLUMES
Focusing on the short-size group-III nitride heterostructures, we have developed a model which takes into account main features of transport of electrons injected into a polar semiconductor under high electric fields. The model is based on an exact analytical solution of Boltzmann transport equation