Focusing on the short-size group-III nitride heterostructures, we have developed a model which takes into account main features of transport of electrons injected into a polar semiconductor under high electric fields. The model is based on an exact analytical solution of Boltzmann transport equation
β¦ LIBER β¦
Group-III Nitrides Hot Electron Effects in Moderate Electric Fields
β Scribed by E.A. Barry; K.W. Kim; V.A. Kochelap
- Publisher
- John Wiley and Sons
- Year
- 2001
- Tongue
- English
- Weight
- 97 KB
- Volume
- 228
- Category
- Article
- ISSN
- 0370-1972
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