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II-VI semiconductor quantum dot quantum wells: a tight-binding study

✍ Scribed by Pérez-Conde, J. ;Bhattacharjee, A. K.

Publisher: John Wiley and Sons
Year: 2006
Tongue: English
Weight: 204 KB
Volume: 203
Category: Article
ISSN: 0031-8965
DOI: 10.1002/pssa.200566136

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✦ Synopsis

Abstract

We have studied the electronic structure, exciton states and optical spectra of spherical semiconductor quantum dot quantum wells (QDQW's) by means of a symmetry‐adapted tight‐binding (TB) method. We have investigated two classes of QDQW's: CdS/HgS/CdS, based on a CdS core which acts as a barrier, with a thin HgS well layer intercalated between the core and a clad layer of CdS. The second class of QDQW's is based on ZnS cores covered with CdS layers which act in this case as a well. The calculated values of the absorption onset show a good agreement with the experimental data. Large photoluminescence Stokes shifts are also predicted. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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