Polar Scattering Rates in II–VI Semiconductor Quantum Wells

✍ Scribed by A.S. Camacho B.

• Publisher: John Wiley and Sons
• Year: 2000
• Tongue: English
• Weight: 95 KB
• Volume: 220
• Category: Article
• ISSN: 0370-1972
• DOI: 10.1002/1521-3951(200007)220:1<53::aid-pssb53>3.0.co;2-f

✦ Synopsis

The electronic scattering due to optical phonons in quantum wells (QWs) is investigated by using a many body perturbative formalism. After analyzing real and imaginary parts of self-energy for a confined electron gas interacting with confined LO-phonons, we concentrate on the imaginary part or scattering rates of electrons in II±VI quantum wells. A detailed study of scattering rates as function of temperature, well-width and carrier concentration for screened and unscreened potential is presented. A comparison of damping between GaAs and CdTe QWs is made; in addition to that, the behavior of CdTe heterostructures as function of well-width, temperature, carrier concentration and screening is followed. Confinement of LO-phonons influences definitely the scattering rates in quantum wells. Particularly in II±VI materials it offers the possibility of tuning scattering rates and polaron life time with the electron layer width.