Fabrication of quantum structures in wide-gap II-VI semiconductors

✍ Scribed by Takashi Yasuda; Baoping Zhang; Yusaburo Segawa

• Publisher: John Wiley and Sons
• Year: 1999
• Tongue: English
• Weight: 168 KB
• Volume: 82
• Category: Article
• ISSN: 8756-663X
• DOI: 10.1002/(sici)1520-6432(199903)82:3<51::aid-ecjb6>3.0.co;2-1

✦ Synopsis

This article considers II-VI compound semiconductors, the realization of new optical devices based on the electrons and holes trapped in low-dimensional and nanostructures (such as quantum wells, quantum lines, and quantum dots) and excitons. Fabrication techniques and a new series of materials are discussed. As the first step, the formation of the three-dimensional trap structure (quantum dot) as well as its optical properties are described, focusing on the natural formation process. Then, aiming at the realization of a new light-emission device based on excitons, a series of materials with large exciton-binding energy (ZnS and ZnO) are described, and the present status of the optical properties is discussed. Especially, the characteristics of the optically pumped laser are examined, and the possibilities of new laser materials are considered.