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Bound Excitons in Wide-Gap II–VI and Nitride Semiconductors. Comparison of Optical Studies of Shallow Dopants in These Materials

✍ Scribed by A. Hoffmann; V. Kutzer; A. Göldner


Publisher
John Wiley and Sons
Year
1998
Tongue
English
Weight
250 KB
Volume
210
Category
Article
ISSN
0370-1972

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