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[IEEE Technical Digest., International Electron Devices Meeting - San Francisco, CA, USA (11-14 Dec. 1988)] Technical Digest., International Electron Devices Meeting - Stress induced leakage current limiting to scale down EEPROM tunnel oxide thickness

✍ Scribed by Naruke, K.; Taguchi, S.; Wada, M.

Book ID: 120922696
Publisher: IEEE
Year: 1988
Weight: 242 KB
Category: Article
DOI: 10.1109/IEDM.1988.32846

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