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[IEEE Symposium Non-Volatile Memory Technology 2005. - Dallas, TX, USA (7-10 Nov. 2005)] Symposium Non-Volatile Memory Technology 2005. - Strong electron correlation effects in non-volatile electronic memory devices

✍ Scribed by Inoue, I.H.; Rozenberg, M.J.; Yasuda, S.; Sanchez, M.J.; Yamazaki, M.; Manago, T.; Akinaga, H.; Takagi, H.; Akoh, H.; Tokura, Y.

Book ID: 126604416
Publisher: IEEE
Year: 2005
Tongue: English
Weight: 521 KB
Category: Article
ISBN-13: 9780780394087
DOI: 10.1109/NVMT.2005.1541421

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