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[IEEE Symposium Non-Volatile Memory Technology 2005. - Dallas, TX, USA (7-10 Nov. 2005)] Symposium Non-Volatile Memory Technology 2005. - Programmable metallization cell memory based on Ag-Ge-S and Cu-Ge-S solid electrolytes

✍ Scribed by Kozicki, M.N.; Balakrishnan, M.; Gopalan, C.; Ratnakumar, C.; Mitkova, M.

No coin nor oath required. For personal study only.

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