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[IEEE Proceedings of 2010 International Symposium on VLSI Technology, System and Application - Hsin Chu, Taiwan (2010.04.26-2010.04.28)] Proceedings of 2010 International Symposium on VLSI Technology, System and Application - On the 60 mV/dec @300 K limit for MOSFET subthreshold swing

✍ Scribed by Cheung, Kin P.

Book ID: 118280065
Publisher: IEEE
Year: 2010
Weight: 298 KB
Volume: 0
Category: Article
ISBN: 1424450632
DOI: 10.1109/vtsa.2010.5488941

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