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[IEEE Proceedings of 1995 IEEE International Reliability Physics Symposium - Las Vegas, NV (1995.04.4-1995.04.6)] 33rd IEEE International Reliability Physics Symposium - An increase of the electromigration reliability of ohmic contacts by enhancing backflow effect

✍ Scribed by Wei Zhang, ; Li, Z.G.; Cheng, Y.H.; Guo, W.L.; Wang, Z.; Sun, Y.H.; Li, X.X.

Book ID: 126693068
Publisher: IEEE
Year: 1995
Weight: 559 KB
Category: Article
ISBN-13: 9780780320314
DOI: 10.1109/RELPHY.1995.513704

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