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[IEEE Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits - Ithaca, NY, USA (7-9 Aug. 1989)] Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits - Electron dynamics and device physics of short-channel HEMTs: transverse-domain formation, velocity overshoot, and short-channel effects

✍ Scribed by Awano, Y.; Kosugi, M.; Kuroda, S.; Mimura, T.; Abe, M.

Book ID: 121011396
Publisher: IEEE
Year: 1989
Weight: 541 KB
Category: Article
DOI: 10.1109/CORNEL.1989.79820

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