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[IEEE International Technical Digest on Electron Devices - San Francisco, CA, USA (9-12 Dec. 1990)] International Technical Digest on Electron Devices - Sub-30ps ECL circuits using high-f/sub T/ Si and SiGe epitaxial base SEEW transistors

✍ Scribed by Burghartz, J.N.; Comfort, J.H.; Patton, G.L.; Cressler, J.D.; Meyerson, B.S.; Stork, J.M.C.; Sun, J.Y.-C.; Scilla, G.; Warnock, J.; Ginsberg, B.J.; Jenkins, K.; Toh, K.-Y.; Harame, D.L.; Mader, S.R.

Book ID: 125500890
Publisher: IEEE
Year: 1990
Weight: 290 KB
Category: Article
DOI: 10.1109/IEDM.1990.237171

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