✦ LIBER ✦

[IEEE International Technical Digest on Electron Devices - San Francisco, CA, USA (9-12 Dec. 1990)] International Technical Digest on Electron Devices - Mechanism and device-to-device variation of leakage current in polysilicon thin film transistors

✍ Scribed by Wu, I.-W.; Lewis, A.G.; Huang, T.-Y.; Jackson, W.B.; Chiang, A.

No coin nor oath required. For personal study only.

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