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[IEEE International Technical Digest on Electron Devices - San Francisco, CA, USA (9-12 Dec. 1990)] International Technical Digest on Electron Devices - Epitaxial-base double-poly self-aligned bipolar transistors

✍ Scribed by Ganin, E.; Chen, T.C.; Stork, J.M.C.; Meyerson, B.S.; Cressler, J.D.; Scilla, G.; Warnock, J.; Harame, D.L.; Patton, G.L.; Ning, T.H.

Book ID: 127121610
Publisher: IEEE
Year: 1990
Weight: 303 KB
Category: Article
DOI: 10.1109/iedm.1990.237126

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