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[IEEE International Technical Digest on Electron Devices Meeting - Washington, DC, USA (3-6 Dec. 1989)] International Technical Digest on Electron Devices Meeting - Novel high performance self-aligned 0.15 micron long T-gate AlInAs-GaInAs HEMTs

โœ Scribed by Mishra, U.K.; Brown, A.S.; Jelloian, L.M.; Thompson, M.; Nguyen, L.D.; Rosenbaum, S.E.


Book ID
127290466
Publisher
IEEE
Year
1989
Weight
273 KB
Category
Article

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