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[IEEE International Technical Digest on Electron Devices Meeting - Washington, DC, USA (3-6 Dec. 1989)] International Technical Digest on Electron Devices Meeting - A self-aligned inverse-T gate fully overlapped LDD device for sub-half micron CMOS

โœ Scribed by Wen, D.S.; Hsu, C.C.-H.; Taur, Y.; Zicherman, D.S.; Wordeman, M.R.; Ning, T.H.


Book ID
120251069
Publisher
IEEE
Year
1989
Weight
225 KB
Category
Article

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