[IEEE International Electron Devices Meeting. Technical Digest - Washington, DC, USA (2-5 Dec. 2001)] International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224) - High performance 0.15 μm recessed gate AlGaN/GaN HEMTs on sapphire

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✍ Bin Yu, ; Haihong Wang, ; Joshi, A.; Qi Xiang, ; Effiong Ibok, ; Ming-Ren Lin, 📂 Article 📅 2001 🏛 IEEE 🌐 English ⚖ 300 KB

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✍ Yi, J.H.; Kim, W.S.; Song, S.; Khang, Y.; Kim, H.-J.; Choi, J.H.; Lim, H.H.; Lee 📂 Article 📅 2001 🏛 IEEE 🌐 English ⚖ 567 KB

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✍ Yang-Kyu Choi, ; Lindert, N.; Peiqi Xuan, ; Tang, S.; Daewon Ha, ; Anderson, E.; 📂 Article 📅 2001 🏛 IEEE 🌐 English ⚖ 596 KB

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✍ Min Yang, ; Schaub, J.; Rogers, D.; Ritter, M.; Rim, K.; Welser, J.; Byeongju Pa 📂 Article 📅 2001 🏛 IEEE 🌐 English ⚖ 477 KB

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✍ Racanelli, M.; Schuegraf, K.; Kalburge, A.; Kar-Roy, A.; Shen, B.; Hu, C.; Chape 📂 Article 📅 2001 🏛 IEEE 🌐 English ⚖ 282 KB

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✍ Mochida, Y.; Takano, T.; Gambe, H. 📂 Article 📅 2001 🏛 IEEE 🌐 English ⚖ 947 KB