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[IEEE International Technical Digest on Electron Devices Meeting - Washington, DC, USA (3-6 Dec. 1989)] International Technical Digest on Electron Devices Meeting - A 40 GHz f/sub T/ Si bipolar transistor LSI technology

✍ Scribed by Sugiyama, M.; Takemura, H.; Ogawa, C.; Tashiro, T.; Morikawa, T.; Nakamae, M.

Book ID: 125500888
Publisher: IEEE
Year: 1989
Weight: 396 KB
Category: Article
DOI: 10.1109/IEDM.1989.74265

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