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[IEEE International Electron Devices Meeting 1991 [Technical Digest] - Washington, DC, USA (8-11 Dec. 1991)] International Electron Devices Meeting 1991 [Technical Digest] - A 64 GHz Si bipolar transistor using in-situ phosphorus doped polysilicon emitter technology

✍ Scribed by Nanba, M.; Kobayashi, T.; Uchino, T.; Nakamura, T.; Kondo, M.; Tamaki, Y.; Iijima, S.; Kure, T.; Tanabe, M.

Book ID: 125500891
Publisher: IEEE
Year: 1991
Weight: 315 KB
Category: Article
ISBN-13: 9780780302433
DOI: 10.1109/IEDM.1991.235360

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