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[IEEE International Technical Digest on Electron Devices Meeting - Washington, DC, USA (3-6 Dec. 1989)] International Technical Digest on Electron Devices Meeting - A new recombination model describing heavy-doping effects and low-temperature behaviour

✍ Scribed by Hurkx, G.A.M.; Klaassen, D.B.M.; Knuvers, M.P.G.; O'Hara, F.G.

Book ID: 121866972
Publisher: IEEE
Year: 1989
Weight: 296 KB
Category: Article
DOI: 10.1109/IEDM.1989.74285

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