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[IEEE International Technical Digest on Electron Devices Meeting - Washington, DC, USA (3-6 Dec. 1989)] International Technical Digest on Electron Devices Meeting - An analytical self-backgating GaAs MESFET model including deep-level trap effects

โœ Scribed by Lee, M.; Forbes, L.; Hallen, T.; Tuinenega, P.


Book ID
118016006
Publisher
IEEE
Year
1989
Weight
316 KB
Volume
0
Category
Article

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