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[IEEE International Technical Digest on Electron Devices Meeting - Washington, DC, USA (3-6 Dec. 1989)] International Technical Digest on Electron Devices Meeting - Are GaAs MOSFETs worth building? A model-based comparison of Si and GaAs n-MOSFETs

✍ Scribed by Fischetti, M.V.; Laux, S.E.

Book ID: 120606812
Publisher: IEEE
Year: 1989
Weight: 345 KB
Category: Article
DOI: 10.1109/IEDM.1989.74326

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